? semiconductor components industries, llc, 2016 august, 2016 ? rev. 4 1 publication order number: nvd5867nl/d nvd5867nl power mosfet 60 v, 22 a, 39 m , single n?channel features ? low r ds(on) to minimize conduction losses ? high current capability ? avalanche energy specified ? aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source v oltage v dss 60 v gate?to?source v oltage v gs 20 v continuous drain cur- rent r jc (notes 1 & 3) steady state t c = 25 c i d 22 a t c = 100 c 16 power dissipation r jc (note 1) t c = 25 c p d 43 w t c = 100 c 21 continuous drain cur- rent r ja (notes 1, 2 & 3) steady state t a = 25 c i d 6.0 a t a = 100 c 4.0 power dissipation r ja (notes 1 & 2) t a = 25 c p d 3.3 w t a = 100 c 1.7 pulsed drain current t a = 25 c, t p = 10 s i dm 85 a current limited by package (note 3) t a = 25 c i dmaxpkg 30 a operating junction and storage temperature t j , t stg ?55 to 175 c source current (body diode) i s 36 a single pulse drain?to?source avalanche energy (t j = 25 c, v dd = 50 v, v gs = 10 v, i l(pk) = 19 a, l = 0.1 mh, r g = 25 ) e as 18 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance maximum ratings parameter symbol value unit junction?to?case (drain) (note 1) r jc 3.5 c/w junction?to?ambient ? steady state (note 2) r ja 45 1. the entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. surface?mounted on fr4 board using a 650 mm 2 , 2 oz. cu pad. 3. maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. dpak case 369aa style 2 marking diagram & pin assignment 60 v 39 m @ 10 v r ds(on) 22 a i d v (br)dss 50 m @ 4.5 v www. onsemi.com 1 2 3 4 see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 1 gate 2 drain 3 source 4 drain ayww v58 67lg a = assembly location* y = year ww = work week v5867l = device code g = pb?free package g s n?channel mosfet d * the assembly location code (a) is front side optional. in cases where the assembly location is stamped in the package, the front side assembly code may be blank.
nvd5867nl www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 60 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a t j = 125 c 100 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 4) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 1.8 2.5 v negative threshold temperature coefficient v gs(th) /t j 5.2 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 11 a 26 39 m v gs = 4.5 v, i d = 11 a 33 50 forward transconductance g fs v ds = 15 v, i d = 11 a 8.0 s charges, capacitances and gate resistances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 675 pf output capacitance c oss 68 reverse transfer capacitance c rss 47 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 22 a 15 nc threshold gate charge q g(th) 1.0 gate?to?source charge q gs 2.2 gate?to?drain charge q gd 4.3 total gate charge q g(tot) v gs = 4.5 v, v ds = 48 v, i d = 22 a 7.6 nc gate resistance r g 1.3 switching characteristics (note 5) turn?on delay time t d(on) v gs = 10 v, v dd = 48 v, i d = 22 a, r g = 2.5 6.5 ns rise time t r 12.6 turn?off delay time t d(off) 18.2 fall time t f 2.4 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.87 1.2 v t j = 125 c 0.78 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 22 a 17 ns charge time ta 13 discharge time tb 4.0 reverse recovery charge q rr 12 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperatures.
nvd5867nl www. onsemi.com 3 typical performance curves 10v v ds , drain?to?source voltage (volts) i d , drain current (amps) v gs , gate?t o?source voltage (volts) figure 1. on?region characteristics figure 2. transfer characteristics i d , drain current (amps) figure 3. on?resistance vs. gate?to?source voltage v gs , gate?t o?source voltage (volts) figure 4. on?resistance vs. drain current and gate voltage i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current vs. drain voltage v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) v ds 10 v t j = 25 c t j = ?55 c t j = 125 c v gs = 4.5 v i d = 22 a v gs = 10 v t j = 25 c 3.8 v 3.0 v 4 v 3.6 v 2.8 v 3.2 v 3.4 v i d = 22 a t j = 25 c v gs = 10 v t j = 25 c 0 10 20 30 40 35 5 0123 23 45 0.020 0.030 0.040 0.050 0.060 46 810 0.020 0.035 10 15 20 5 0.030 0.025 0.040 0.6 0.8 1.0 1.2 1.4 ?50 0 50 100 175 1.6 1.8 ?25 25 75 125 3579 4.5 v v gs = 0 v t j = 150 c t j = 125 c 100 1000 10 20 30 40 60 10 10000 25 15 45 0 10 20 30 40 35 5 25 15 2.0 2.4 50 2.2 150
nvd5867nl www. onsemi.com 4 typical performance curves c rss 02030 drain?to?source voltage (volts) c, capacitance (pf) figure 7. capacitance variation 10 v gs = 0 v t j = 25 c c oss c iss v gs figure 8. gate?to?source voltage vs. total charge v gs , gate?t o?source voltage (volts) q g , total gate charge (nc) v ds = 48 v i d = 22 a t j = 25 c q gd q gs q t v sd , source?to?drain voltage (volts) i s , source current (amps) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance (ohms) t, time (ns) v gs = 0 v figure 10. diode forward voltage vs. current t r t d(off) t d(on) t f v dd = 48 v i d = 22 a v gs = 10 v t j = 25 c figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (volts) i d , drain current (amps) r ds(on) limit thermal limit package limit v gs = 10 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 10 s 40 t j , junction temperature ( c) i d = 19 a figure 12. maximum avalanche energy vs. starting junction temperature eas, single pulse drain?to?source avalanche energy (mj) 0 100 200 300 400 0 0 2 4 6 8 51015 1 10 100 10 100 1000 0.7 0.5 0 10 20 5 15 0.8 0.9 10 100 1 10 100 0.1 1 25 125 20 10 0 75 100 175 50 1.0 15 5 700 800 600 500 10 1 0.6 900 1000 50 60 150
nvd5867nl www. onsemi.com 5 typical performance curves figure 13. thermal response t, pulse time (s) 0.1 10 0.01 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse 0.01 0.1 0.001 0.0001 0.00001 0.000001 1.0 r jc(t) ( c/w) effective transient thermal resistance ordering information order number package shipping ? nvd5867nlt4g dpak (pb?free) 2500 / tape & reel SVD5867NLT4G dpak (pb?free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
nvd5867nl www. onsemi.com 6 package dimensions dpak case 369aa issue b b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nvd5867nl/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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